Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs (2013)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA (CONGRESSOS)
- Language: Inglês
- Imprenta:
- Publisher: Institut Superieur d'Électronique
- Publisher place: Paris
- Date published: 2013
- Source:
- Título do periódico: EUROSOI 2013
- Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits
-
ABNT
MARTINO, João Antonio et al. Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 26 abr. 2024. -
APA
Martino, J. A., Santos, S. D. dos, Simoen, E., Strobe, V., Cretu, B., Routoure, J. -M., et al. (2013). Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. In EUROSOI 2013. Paris: Institut Superieur d'Électronique. -
NLM
Martino JA, Santos SD dos, Simoen E, Strobe V, Cretu B, Routoure J-M, Carin R, Aoulaiche M, Veloso A, Claeys C. Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. EUROSOI 2013. 2013 ;[citado 2024 abr. 26 ] -
Vancouver
Martino JA, Santos SD dos, Simoen E, Strobe V, Cretu B, Routoure J-M, Carin R, Aoulaiche M, Veloso A, Claeys C. Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs. EUROSOI 2013. 2013 ;[citado 2024 abr. 26 ] - The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300 o.C
- Comparison between the leakage drain current behavior in SOI nMOSFETs and SOI nMOSFETs operating at 300 o. C
- Obtenção da estrutura de perfil de um transistor MOS a partir de parâmetros PSPICE
- Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high temperatures
- A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET
- The graded-channel SOI NMOSFET and its potential to analog applications
- CPU didática. (também em CD-Rom)
- Optimization of the twin gate SOI MOSFET
- Método simples para obtenção de variação da carga efetiva no óxido de um SOI-MOSFET em função da radiação. (em CD-Rom)
- Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
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