Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation (2013)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF ; BINDILATTI, VALDIR - IF
- Unidade: IF
- Subjects: FOTODETECTORES; ÁTOMOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: JOURNAL OF APPLIED PHYSICS
- Volume/Número/Paginação/Ano: v. 114, n. 8, p. 083708, ago. 2013
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ABNT
MAIA, Álvaro Diego Bernardino et al. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation. JOURNAL OF APPLIED PHYSICS, v. 114, n. 8, p. 083708, 2013Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf. Acesso em: 19 abr. 2024. -
APA
Maia, Á. D. B., Aquino, V. M. de, Dias, I. F. L., Silva, E. C. F. da, Quivy, A. A., & Bindilatti, V. (2013). Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation. JOURNAL OF APPLIED PHYSICS, 114( 8), 083708. Recuperado de https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf -
NLM
Maia ÁDB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 8): 083708.[citado 2024 abr. 19 ] Available from: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf -
Vancouver
Maia ÁDB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 8): 083708.[citado 2024 abr. 19 ] Available from: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf - The influence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots
- Estudo dos modelos de ajuste da variaão do "gap" com a temperatura em GaAs "bulk"
- High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy
- Energy levels for lens-shaped self-assembled quantum dots heterostructures
- High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors
- Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
- Modeling noise in superlattice quantum-well infrared photodetectors
- Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells
- The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells
- Computation of dark current in QWIPs using a modelling based on ehrenfest theorem
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