Van der waals heterostructure of phosphorene and graphene: tuning the schottky barrier and doping by electrostatic gating (2015)
- Authors:
- USP affiliated authors: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF ; SOUSA, JOSÉ EDUARDO PADILHA DE - IF
- Unidade: IF
- DOI: 10.1103/PhysRevLett.114.066803
- Subjects: ELETROSTÁTICA; ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher place: College, PK.
- Date published: 2015
- Source:
- Título do periódico: PHYSICAL REVIEW LETTERS
- Volume/Número/Paginação/Ano: v. 114, n. 6, p. 066803, fev. 2015
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
PADILHA, J. E. e FAZZIO, Adalberto e SILVA, Antonio Jose Roque da. Van der waals heterostructure of phosphorene and graphene: tuning the schottky barrier and doping by electrostatic gating. PHYSICAL REVIEW LETTERS, v. fe 2015, n. 6, p. 066803, 2015Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.114.066803. Acesso em: 19 abr. 2024. -
APA
Padilha, J. E., Fazzio, A., & Silva, A. J. R. da. (2015). Van der waals heterostructure of phosphorene and graphene: tuning the schottky barrier and doping by electrostatic gating. PHYSICAL REVIEW LETTERS, fe 2015( 6), 066803. doi:10.1103/PhysRevLett.114.066803 -
NLM
Padilha JE, Fazzio A, Silva AJR da. Van der waals heterostructure of phosphorene and graphene: tuning the schottky barrier and doping by electrostatic gating [Internet]. PHYSICAL REVIEW LETTERS. 2015 ; fe 2015( 6): 066803.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1103/PhysRevLett.114.066803 -
Vancouver
Padilha JE, Fazzio A, Silva AJR da. Van der waals heterostructure of phosphorene and graphene: tuning the schottky barrier and doping by electrostatic gating [Internet]. PHYSICAL REVIEW LETTERS. 2015 ; fe 2015( 6): 066803.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1103/PhysRevLett.114.066803 - IxV Curves of Boron and Nitrogen Doping Zigzag Graphene Nanoribbons
- Quantum spin hall effect in a disordered hexagonal 'SI' IND. x''GE' IND. 1−x' alloy
- Nanodispositivos baseados em grafeno
- Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
Informações sobre o DOI: 10.1103/PhysRevLett.114.066803 (Fonte: oaDOI API)
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 | PhysRevLett.114.066803.pd... | Direct link |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
