Coexistence of Sm3+ and Sm2+ ions in amorphous SiOx: origin, main light emission lines and excitation-recombination mechanisms (2016)
- Autor:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- DOI: 10.1364/OME.6.002108
- Subjects: MATÉRIA CONDENSADA; FILMES FINOS
- Keywords: Rare-earth-doped materials; Thin films; Optical properties
- Language: Inglês
- Imprenta:
- Publisher place: Washington, DC
- Date published: 2016
- Source:
- Título do periódico: Optical Materials Express
- ISSN: 2159-3930
- Volume/Número/Paginação/Ano: v. 6, n. 6, p. 2108-2117, May 2016
- Este periódico é de acesso aberto
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: gold
- Licença: cc-by
-
ABNT
ZANATTA, Antonio Ricardo. Coexistence of Sm3+ and Sm2+ ions in amorphous SiOx: origin, main light emission lines and excitation-recombination mechanisms. Optical Materials Express, v. 6, n. 6, p. 2108-2117, 2016Tradução . . Disponível em: https://doi.org/10.1364/OME.6.002108. Acesso em: 18 abr. 2024. -
APA
Zanatta, A. R. (2016). Coexistence of Sm3+ and Sm2+ ions in amorphous SiOx: origin, main light emission lines and excitation-recombination mechanisms. Optical Materials Express, 6( 6), 2108-2117. doi:10.1364/OME.6.002108 -
NLM
Zanatta AR. Coexistence of Sm3+ and Sm2+ ions in amorphous SiOx: origin, main light emission lines and excitation-recombination mechanisms [Internet]. Optical Materials Express. 2016 ; 6( 6): 2108-2117.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1364/OME.6.002108 -
Vancouver
Zanatta AR. Coexistence of Sm3+ and Sm2+ ions in amorphous SiOx: origin, main light emission lines and excitation-recombination mechanisms [Internet]. Optical Materials Express. 2016 ; 6( 6): 2108-2117.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1364/OME.6.002108 - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
Informações sobre o DOI: 10.1364/OME.6.002108 (Fonte: oaDOI API)
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