Stability and accuracy control of k . p parameters (2016)
- Authors:
- USP affiliated authors: SILVA, JUAREZ LOPES FERREIRA DA - IQSC ; SIPAHI, GUILHERME MATOS - IFSC
- Unidades: IQSC; IFSC
- DOI: 10.1088/0268-1242/31/10/105002
- Subjects: SEMICONDUTORES; MATERIAIS NANOESTRUTURADOS; SPIN; SISTEMAS HAMILTONIANOS
- Keywords: k · p parameters; DFT-HSE; Band structure; Electronic states
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Semiconductor Science and Technology
- ISSN: 0268-1242
- Volume/Número/Paginação/Ano: v. 31, n. 10, p. 105002-1-105002-10, Oct. 2016
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
-
ABNT
BASTOS, Carlos M. O. et al. Stability and accuracy control of k . p parameters. Semiconductor Science and Technology, v. 31, n. 10, p. 105002-1-105002-10, 2016Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/31/10/105002. Acesso em: 18 abr. 2024. -
APA
Bastos, C. M. O., Sabino, F. P., Faria Junior, P. E., Campos, T., Silva, J. L. F. da, & Sipahi, G. M. (2016). Stability and accuracy control of k . p parameters. Semiconductor Science and Technology, 31( 10), 105002-1-105002-10. doi:10.1088/0268-1242/31/10/105002 -
NLM
Bastos CMO, Sabino FP, Faria Junior PE, Campos T, Silva JLF da, Sipahi GM. Stability and accuracy control of k . p parameters [Internet]. Semiconductor Science and Technology. 2016 ; 31( 10): 105002-1-105002-10.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1088/0268-1242/31/10/105002 -
Vancouver
Bastos CMO, Sabino FP, Faria Junior PE, Campos T, Silva JLF da, Sipahi GM. Stability and accuracy control of k . p parameters [Internet]. Semiconductor Science and Technology. 2016 ; 31( 10): 105002-1-105002-10.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1088/0268-1242/31/10/105002 - Ab-initio investigation of structural stability and exfoliation energies in transition metal dichalcogenides based on Ti-, V-, and Mo-group elements
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- Study of stability and electronic properties of transition metal dichalcogenides using density functional theory
- Size-induced phase evolution of MoSe2 nanoflakes revealed by density functional theory
- Ab initio investigation of structural stability and exfoliation energies in transition metal dichalcogenides based on Ti-, V-, and Mo-group elements
- A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory
- Formation and size evolution of transition metal dichalcogenides nanoflakes from Ab initio studies
- Realistic gap and spin-orbit splitting from hybrid-DFT: determining effective mass parameters comparable to experiments
- Theoretical study of transition metal dichalcogenides: stability energy, structural and electronic properties
- Comparative study between 8x 8 and 6x6 k.p Hamiltonian: the case of GaAs zinc blende
Informações sobre o DOI: 10.1088/0268-1242/31/10/105002 (Fonte: oaDOI API)
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