Effects of measurements conditions on an extended-gate FET used as pH sensor (2016)
- Authors:
- Autor USP: MULATO, MARCELO - FFCLRP
- Unidade: FFCLRP
- DOI: 10.1590/1980-5373-MR-2015-0248
- Subjects: SENSORES BIOMÉDICOS; MONITORAMENTO; NORMALIZAÇÃO
- Keywords: Extended-gate FET; Fluorine-doped tin oxide; pH sensor; Temperature dependence; Time evolution
- Language: Inglês
- Imprenta:
- Publisher place: São Carlos
- Date published: 2016
- Source:
- Título do periódico: Materials Research
- ISSN: 1516-1439
- Volume/Número/Paginação/Ano: v. 19, n. 1, p. 267-272, 2016
- Este periódico é de acesso aberto
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: gold
- Licença: cc-by
-
ABNT
FERNANDES, Jessica Colnaghi e NASCIMENTO, Raphael Aparecido Sanches e MULATO, Marcelo. Effects of measurements conditions on an extended-gate FET used as pH sensor. Materials Research, v. 19, n. 1, p. 267-272, 2016Tradução . . Disponível em: https://doi.org/10.1590/1980-5373-MR-2015-0248. Acesso em: 24 abr. 2024. -
APA
Fernandes, J. C., Nascimento, R. A. S., & Mulato, M. (2016). Effects of measurements conditions on an extended-gate FET used as pH sensor. Materials Research, 19( 1), 267-272. doi:10.1590/1980-5373-MR-2015-0248 -
NLM
Fernandes JC, Nascimento RAS, Mulato M. Effects of measurements conditions on an extended-gate FET used as pH sensor [Internet]. Materials Research. 2016 ; 19( 1): 267-272.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1590/1980-5373-MR-2015-0248 -
Vancouver
Fernandes JC, Nascimento RAS, Mulato M. Effects of measurements conditions on an extended-gate FET used as pH sensor [Internet]. Materials Research. 2016 ; 19( 1): 267-272.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1590/1980-5373-MR-2015-0248 - Extended gate field effect transistor using 'V IND.2''O IND.5' xerogel sensing membrane by sol-gel method
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Informações sobre o DOI: 10.1590/1980-5373-MR-2015-0248 (Fonte: oaDOI API)
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