Nanoscale characterization of bismuth telluride epitaxial layers by advanced X-ray analysis (2017)
- Authors:
- Autor USP: MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- DOI: 10.1107/S1600576717000760
- Subjects: DIFRAÇÃO POR RAIOS X; MATERIAIS NANOESTRUTURADOS
- Language: Inglês
- Imprenta:
- Publisher place: Copenhagen
- Date published: 2017
- Source:
- Título do periódico: Journal of Applied Crystallography
- ISSN: 1600-5767
- Volume/Número/Paginação/Ano: v. 50, n. 2, p. 399-410, 2017
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
MORELHAO, Sergio Luiz et al. Nanoscale characterization of bismuth telluride epitaxial layers by advanced X-ray analysis. Journal of Applied Crystallography, v. 50, n. 2, p. 399-410, 2017Tradução . . Disponível em: https://doi.org/10.1107/S1600576717000760. Acesso em: 16 abr. 2024. -
APA
Morelhao, S. L., Fornari, C. I., Rappl, P. H. de O., & Abramof, E. (2017). Nanoscale characterization of bismuth telluride epitaxial layers by advanced X-ray analysis. Journal of Applied Crystallography, 50( 2), 399-410. doi:10.1107/S1600576717000760 -
NLM
Morelhao SL, Fornari CI, Rappl PH de O, Abramof E. Nanoscale characterization of bismuth telluride epitaxial layers by advanced X-ray analysis [Internet]. Journal of Applied Crystallography. 2017 ; 50( 2): 399-410.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1107/S1600576717000760 -
Vancouver
Morelhao SL, Fornari CI, Rappl PH de O, Abramof E. Nanoscale characterization of bismuth telluride epitaxial layers by advanced X-ray analysis [Internet]. Journal of Applied Crystallography. 2017 ; 50( 2): 399-410.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1107/S1600576717000760 - High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
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Informações sobre o DOI: 10.1107/S1600576717000760 (Fonte: oaDOI API)
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