Simulation of the dark current of quantum-well infrared photodetectors (2017)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1016/j.spmi.2017.02.015
- Subjects: FOTODETECTORES; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Superlattices and Microstructures
- Volume/Número/Paginação/Ano: v. 104, p. 232-239, abr. 2017
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
CLARO, M. S. et al. Simulation of the dark current of quantum-well infrared photodetectors. Superlattices and Microstructures, v. 104, p. 232-239, 2017Tradução . . Disponível em: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via%3Dihub. Acesso em: 18 abr. 2024. -
APA
Claro, M. S., Fernandes, F. M., Silva, E. C. F. da, & Quivy, A. A. (2017). Simulation of the dark current of quantum-well infrared photodetectors. Superlattices and Microstructures, 104, 232-239. doi:10.1016/j.spmi.2017.02.015 -
NLM
Claro MS, Fernandes FM, Silva ECF da, Quivy AA. Simulation of the dark current of quantum-well infrared photodetectors [Internet]. Superlattices and Microstructures. 2017 ; 104 232-239.[citado 2024 abr. 18 ] Available from: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via%3Dihub -
Vancouver
Claro MS, Fernandes FM, Silva ECF da, Quivy AA. Simulation of the dark current of quantum-well infrared photodetectors [Internet]. Superlattices and Microstructures. 2017 ; 104 232-239.[citado 2024 abr. 18 ] Available from: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via%3Dihub - Estudo dos modelos de ajuste da variaão do "gap" com a temperatura em GaAs "bulk"
- High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy
- Energy levels for lens-shaped self-assembled quantum dots heterostructures
- High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors
- Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
- Modeling noise in superlattice quantum-well infrared photodetectors
- Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells
- The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells
- Computation of dark current in QWIPs using a modelling based on ehrenfest theorem
- Growth, processing and testing of infrared photodetectors based on quantum dots
Informações sobre o DOI: 10.1016/j.spmi.2017.02.015 (Fonte: oaDOI API)
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