Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes (2016)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP ; OLIVEIRA, ALBERTO VINICIUS DE - EP
- Unidade: EP
- DOI: 10.1088/0268-1242/31/11/114002
- Subjects: SEMICONDUTORES; MICROELETRÔNICA
- Language: Inglês
- Source:
- Título do periódico: Semiconductor Science and Technology
- Volume/Número/Paginação/Ano: v. 31, n. 11, p. 114002 , 2016
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
- Licença: other-oa
-
ABNT
OLIVEIRA, Alberto Vinicius de et al. Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes. Semiconductor Science and Technology, v. 31, n. 11, p. 114002 , 2016Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/31/11/114002. Acesso em: 24 abr. 2024. -
APA
Oliveira, A. V. de, Agopian, P. G. D., Simoen, E., Langer, R., Collaert, N., Thean, A., et al. (2016). Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes. Semiconductor Science and Technology, 31( 11), 114002 . doi:10.1088/0268-1242/31/11/114002 -
NLM
Oliveira AV de, Agopian PGD, Simoen E, Langer R, Collaert N, Thean A, Claeys C, Martino JA. Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes [Internet]. Semiconductor Science and Technology. 2016 ; 31( 11): 114002 .[citado 2024 abr. 24 ] Available from: https://doi.org/10.1088/0268-1242/31/11/114002 -
Vancouver
Oliveira AV de, Agopian PGD, Simoen E, Langer R, Collaert N, Thean A, Claeys C, Martino JA. Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes [Internet]. Semiconductor Science and Technology. 2016 ; 31( 11): 114002 .[citado 2024 abr. 24 ] Available from: https://doi.org/10.1088/0268-1242/31/11/114002 - Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes
- GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes
- Impact of Gate Stack Layer Composition on Dynamic Threshold Voltage and Analog Parameters of Ge pMOSFETs
- Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures
- Influence of interface trap density on vertical NW-TFETs with different source composition
- Temperature influence on nanowire tunnel field effect transistors
- Threshold voltage extraction in Tunnel FETs
- Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source
- Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation
- The impact of the temperature on In0.53Ga0.47As nTFETs
Informações sobre o DOI: 10.1088/0268-1242/31/11/114002 (Fonte: oaDOI API)
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