Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films (2018)
- Authors:
- Autor USP: MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- DOI: 10.1088/2053-1591/aadeb7
- Subjects: DIFRAÇÃO POR RAIOS X; SEMICONDUTORES; CRISTALOGRAFIA DE RAIOS X
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Materials Research Express
- Volume/Número/Paginação/Ano: v. 5, n. 11, p. 116410, nov. 2018
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
FORNARI, C. I et al. Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films. Materials Research Express, v. no 2018, n. 11, p. 116410, 2018Tradução . . Disponível em: http://iopscience.iop.org/article/10.1088/2053-1591/aadeb7. Acesso em: 19 abr. 2024. -
APA
Fornari, C. I., Rappl, P. H. O., Fornari, G., Travelho, J. S., Castro, S. de, Pirralho, M. J. P., et al. (2018). Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films. Materials Research Express, no 2018( 11), 116410. doi:10.1088/2053-1591/aadeb7 -
NLM
Fornari CI, Rappl PHO, Fornari G, Travelho JS, Castro S de, Pirralho MJP, Pena FS, Peres ML, Abramof E, Morelhao SL. Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films [Internet]. Materials Research Express. 2018 ; no 2018( 11): 116410.[citado 2024 abr. 19 ] Available from: http://iopscience.iop.org/article/10.1088/2053-1591/aadeb7 -
Vancouver
Fornari CI, Rappl PHO, Fornari G, Travelho JS, Castro S de, Pirralho MJP, Pena FS, Peres ML, Abramof E, Morelhao SL. Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films [Internet]. Materials Research Express. 2018 ; no 2018( 11): 116410.[citado 2024 abr. 19 ] Available from: http://iopscience.iop.org/article/10.1088/2053-1591/aadeb7 - High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
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Informações sobre o DOI: 10.1088/2053-1591/aadeb7 (Fonte: oaDOI API)
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