Electric tuning of topological properties in a symmetric broken gap quantum well (2019)
- Authors:
- Autor USP: SIPAHI, GUILHERME MATOS - IFSC
- Unidade: IFSC
- Subjects: POÇOS QUÂNTICOS; CAMPO ELETROMAGNÉTICO
- Language: Inglês
- Imprenta:
- Publisher: American Physical Society - APS
- Publisher place: College Park
- Date published: 2019
- Source:
- Título: Bulletin of the American Physical Society
- ISSN: 0003-0503
- Volume/Número/Paginação/Ano: abstr. C03.00002, Mar. 2019
- Conference titles: APS March Meeting
-
ABNT
CAMPOS, Tiago de et al. Electric tuning of topological properties in a symmetric broken gap quantum well. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Disponível em: http://meetings.aps.org/Meeting/MAR19/Session/C03.2. Acesso em: 02 dez. 2024. , 2019 -
APA
Campos, T. de, Sandoval, M. A. T., Diago-Cisneros, L., & Sipahi, G. M. (2019). Electric tuning of topological properties in a symmetric broken gap quantum well. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Recuperado de http://meetings.aps.org/Meeting/MAR19/Session/C03.2 -
NLM
Campos T de, Sandoval MAT, Diago-Cisneros L, Sipahi GM. Electric tuning of topological properties in a symmetric broken gap quantum well [Internet]. Bulletin of the American Physical Society. 2019 ;[citado 2024 dez. 02 ] Available from: http://meetings.aps.org/Meeting/MAR19/Session/C03.2 -
Vancouver
Campos T de, Sandoval MAT, Diago-Cisneros L, Sipahi GM. Electric tuning of topological properties in a symmetric broken gap quantum well [Internet]. Bulletin of the American Physical Society. 2019 ;[citado 2024 dez. 02 ] Available from: http://meetings.aps.org/Meeting/MAR19/Session/C03.2 - Theoretical luminescence spectra from spin-polarized diluted magnetic semiconductor heterostructures
- Investigation of the spin charge polarization in diluted magnetic semiconductors (DMS) based on II-VI group
- Feira de Profissões da USP - FEPUSP, 2
- Theoretical luminescence spectra in p-type superlattices based on InGaAsN
- Spin polarization of Co(0001)/graphene junctions from first principles
- Magnetic field effects and nodal ground states in InP nanowires
- Cálculo dos parâmetros k.p para semicondutores Ga-V na forma zinc blende
- Investigação das propriedades ópticas em sistemas de GaAs/InGaAsN dopadas tipo-p sob efeito de campo elétrico
- Optical properties calculations in nitrides heterostructures
- Simulaçãodepropriedades eletrônicas de HEMTs
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas