Spin-polarization control driven by a rashba-type e ect breaking the mirror symmetry in two-dimensional dual topological insulators (2018)
- Authors:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: FÍSICA DA MATÉRIA CONDENSADA; MATERIAIS NANOESTRUTURADOS; NANOTECNOLOGIA
- Language: Inglês
- Imprenta:
-
ABNT
ACOSTA, Carlos Mera e FAZZIO, Adalberto. Spin-polarization control driven by a rashba-type e ect breaking the mirror symmetry in two-dimensional dual topological insulators. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/abs/1811.11014. Acesso em: 16 abr. 2024. , 2018 -
APA
Acosta, C. M., & Fazzio, A. (2018). Spin-polarization control driven by a rashba-type e ect breaking the mirror symmetry in two-dimensional dual topological insulators. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/abs/1811.11014 -
NLM
Acosta CM, Fazzio A. Spin-polarization control driven by a rashba-type e ect breaking the mirror symmetry in two-dimensional dual topological insulators [Internet]. 2018 ;[citado 2024 abr. 16 ] Available from: https://arxiv.org/abs/1811.11014 -
Vancouver
Acosta CM, Fazzio A. Spin-polarization control driven by a rashba-type e ect breaking the mirror symmetry in two-dimensional dual topological insulators [Internet]. 2018 ;[citado 2024 abr. 16 ] Available from: https://arxiv.org/abs/1811.11014 - Spectral distribution of photoionization cross section of 'FE POT.2+' in inp: 'FE'
- Terras raras em gap
- Estrutura eletronica e geometrica dos clusters de 'GA IND.N' 'AS IND.M' (n,m = 1-3)
- Estrutura eletronica da microestrutura: 'GA IND.N' 'AS IND.M'
- Role played by n and n-n impurities in type-'IV' semiconductors
- Theoretical investigation of the optical spectra of superconducting 'YBA IND.2''CU IND.3''O IND.7'
- Electronic structure of periodically 'SI'-'GAMA'-doped'GA''AS'
- Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan
- Optical transitions in ruby across the corundum to 'Rh IND.2''O IND.3' (II) phase transformation
- Gap e 'GA''AS' dopados com 'V POT.2+': baixo spin x alto spin
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
