Source: Solid State Electronics. Unidade: EP
Assunto: SEMICONDUTORES
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TORRES, L C M e VERDONCK, Patrick Bernard. Precise method to determine the stress current to be applied to electromigration test structures. Solid State Electronics, v. 39, n. 12, p. 1805-7, 1996Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(96)00077-9. Acesso em: 03 jun. 2024.APA
Torres, L. C. M., & Verdonck, P. B. (1996). Precise method to determine the stress current to be applied to electromigration test structures. Solid State Electronics, 39( 12), 1805-7. doi:10.1016/s0038-1101(96)00077-9NLM
Torres LCM, Verdonck PB. Precise method to determine the stress current to be applied to electromigration test structures [Internet]. Solid State Electronics. 1996 ;39( 12): 1805-7.[citado 2024 jun. 03 ] Available from: https://doi.org/10.1016/s0038-1101(96)00077-9Vancouver
Torres LCM, Verdonck PB. Precise method to determine the stress current to be applied to electromigration test structures [Internet]. Solid State Electronics. 1996 ;39( 12): 1805-7.[citado 2024 jun. 03 ] Available from: https://doi.org/10.1016/s0038-1101(96)00077-9
