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Artigo de periodico
Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source (2016)
Neves, Felipe S; Agopian, Paula Ghedini Der ; Cretu, B; Rooyackers, Rita; Vandooren, A; Simoen, Eddy ; Thean, Aaron; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NEVES, Felipe S et al. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Transactions on Electron Devices, v. 63, n. 4, p. 1658-1665, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2533360. Acesso em: 23 maio 2024.
APA
Neves, F. S., Agopian, P. G. D., Cretu, B., Rooyackers, R., Vandooren, A., Simoen, E., et al. (2016). Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Transactions on Electron Devices, 63( 4), 1658-1665. doi:10.1109/ted.2016.2533360
NLM
Neves FS, Agopian PGD, Cretu B, Rooyackers R, Vandooren A, Simoen E, Thean A, Martino JA. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 4): 1658-1665.[citado 2024 maio 23 ] Available from: https://doi.org/10.1109/ted.2016.2533360
Vancouver
Neves FS, Agopian PGD, Cretu B, Rooyackers R, Vandooren A, Simoen E, Thean A, Martino JA. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 4): 1658-1665.[citado 2024 maio 23 ] Available from: https://doi.org/10.1109/ted.2016.2533360
Artigo de periodico
Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics (2014)
Santos, Sara Dereste dos; Martino, João Antonio ; Cretu, B; Strobel, V; Routoure, J.-M; Carin, R; Aoulaiche, Marc; Jurczak, Malgorzata; Claeys, Cor
Source: Solid-State Electronics. Unidade: EP
Subjects: TEMPERATURA, MICROELETRÔNICA, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Sara Dereste dos et al. Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics. Solid-State Electronics, v. 97, p. 14-22, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2014.04.034. Acesso em: 23 maio 2024.
APA
Santos, S. D. dos, Martino, J. A., Cretu, B., Strobel, V., Routoure, J. -M., Carin, R., et al. (2014). Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics. Solid-State Electronics, 97, 14-22. doi:10.1016/j.sse.2014.04.034
NLM
Santos SD dos, Martino JA, Cretu B, Strobel V, Routoure J-M, Carin R, Aoulaiche M, Jurczak M, Claeys C. Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics [Internet]. Solid-State Electronics. 2014 ; 97 14-22.[citado 2024 maio 23 ] Available from: https://doi.org/10.1016/j.sse.2014.04.034
Vancouver
Santos SD dos, Martino JA, Cretu B, Strobel V, Routoure J-M, Carin R, Aoulaiche M, Jurczak M, Claeys C. Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics [Internet]. Solid-State Electronics. 2014 ; 97 14-22.[citado 2024 maio 23 ] Available from: https://doi.org/10.1016/j.sse.2014.04.034
Artigo de periodico
Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities (2013)
Simoen, Eddy ; Martino, João Antonio ; Aoulaiche, Marc; Santos, Sara Dereste dos; Strobel, V; Cretu, B; Routoure, J.-M; Carin, R; Rodriguez, Adriana Pinheiro Martinelli; Tejada, Julián; Claeys, Cor ; Rodriguez, A. Luque
Source: ECS Journal of Solid State Science and Technology. Unidade: EP
Subjects: SILÍCIO, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMOEN, Eddy et al. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, v. 2, n. 11, p. Q205-Q210, 2013Tradução . . Disponível em: https://doi.org/10.1149/2.011311jss. Acesso em: 23 maio 2024.
APA
Simoen, E., Martino, J. A., Aoulaiche, M., Santos, S. D. dos, Strobel, V., Cretu, B., et al. (2013). Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, 2( 11), Q205-Q210. doi:10.1149/2.011311jss
NLM
Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Rodriguez APM, Tejada J, Claeys C, Rodriguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2024 maio 23 ] Available from: https://doi.org/10.1149/2.011311jss
Vancouver
Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Rodriguez APM, Tejada J, Claeys C, Rodriguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2024 maio 23 ] Available from: https://doi.org/10.1149/2.011311jss

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