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Artigo de periodico
Study of proton radiation effects among diamond and rectangular gate MOSFET layouts (2017)
Seixas Junior, Luis Eduardo; S Finco1,; Silveira, Marcilei Aparecida Guazzelli da; Medina, Nilberto Heder; Gimenez, S P
Source: Materials Research Express. Unidade: IF
Subjects: FÍSICA NUCLEAR, RADIAÇÃO IONIZANTE
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ABNT
SEIXAS JUNIOR, Luis Eduardo et al. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts. Materials Research Express, v. 4, n. ja, p. 015901, 2017Tradução . . Disponível em: http://iopscience.iop.org/article/10.1088/2053-1591/4/1/015901. Acesso em: 22 maio 2024.
APA
Seixas Junior, L. E., S Finco1,, Silveira, M. A. G. da, Medina, N. H., & Gimenez, S. P. (2017). Study of proton radiation effects among diamond and rectangular gate MOSFET layouts. Materials Research Express, 4( ja), 015901. doi:10.1088/2053-1591/4/1/015901
NLM
Seixas Junior LE, S Finco1, Silveira MAG da, Medina NH, Gimenez SP. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts [Internet]. Materials Research Express. 2017 ; 4( ja): 015901.[citado 2024 maio 22 ] Available from: http://iopscience.iop.org/article/10.1088/2053-1591/4/1/015901
Vancouver
Seixas Junior LE, S Finco1, Silveira MAG da, Medina NH, Gimenez SP. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts [Internet]. Materials Research Express. 2017 ; 4( ja): 015901.[citado 2024 maio 22 ] Available from: http://iopscience.iop.org/article/10.1088/2053-1591/4/1/015901
Artigo de periodico
Performance of electronic devices submitted to X-rays and high energy proton beams (2012)
Silveira, Marcilei Aparecida Guazzelli da ; Cirne, Karin Huscher; Santos, R B B; Gimenez, S P; Seixas, L E; Melo, W; Lima, J A de; Barbosa, Marcel Dupret Lopes ; Medina, Nilberto Heder ; Added, Nemitala ; Tabacniks, Manfredo Harri
Source: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Unidade: IF
Subjects: RAIOS X, RADIAÇÃO IONIZANTE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVEIRA, Marcilei Aparecida Guazzelli da et al. Performance of electronic devices submitted to X-rays and high energy proton beams. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, v. 273, p. 135-138, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.nimb.2011.07.058. Acesso em: 22 maio 2024.
APA
Silveira, M. A. G. da, Cirne, K. H., Santos, R. B. B., Gimenez, S. P., Seixas, L. E., Melo, W., et al. (2012). Performance of electronic devices submitted to X-rays and high energy proton beams. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273, 135-138. doi:10.1016/j.nimb.2011.07.058
NLM
Silveira MAG da, Cirne KH, Santos RBB, Gimenez SP, Seixas LE, Melo W, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Performance of electronic devices submitted to X-rays and high energy proton beams [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 135-138.[citado 2024 maio 22 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.058
Vancouver
Silveira MAG da, Cirne KH, Santos RBB, Gimenez SP, Seixas LE, Melo W, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Performance of electronic devices submitted to X-rays and high energy proton beams [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 135-138.[citado 2024 maio 22 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.058
Artigo de periodico
Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs (2012)
Cirne, Karin Huscher; Silveira, M A G; Santos, R B B; Gimenez, S P; Seixas jr, L E; Melo, W R de; Lima, J A de; Barbosa, M D L; Medina, N. H.; Added, N. ; Tabacniks, Manfredo Harri
Source: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Unidade: IF
Subjects: RADIAÇÃO IONIZANTE, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CIRNE, Karin Huscher et al. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, v. 273, p. 80-82, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.nimb.2011.07.044. Acesso em: 22 maio 2024.
APA
Cirne, K. H., Silveira, M. A. G., Santos, R. B. B., Gimenez, S. P., Seixas jr, L. E., Melo, W. R. de, et al. (2012). Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273, 80-82. doi:10.1016/j.nimb.2011.07.044
NLM
Cirne KH, Silveira MAG, Santos RBB, Gimenez SP, Seixas jr LE, Melo WR de, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 80-82.[citado 2024 maio 22 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.044
Vancouver
Cirne KH, Silveira MAG, Santos RBB, Gimenez SP, Seixas jr LE, Melo WR de, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 80-82.[citado 2024 maio 22 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.044
Trabalho de evento-resumo
Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. (2011)
Cirne, Karin Huscher; Lima, J A de; Seixas Jr, L E; Silveira, M A G; Barbosa, M D L; Tabacniks, Manfredo Harri ; Added, N; Medina, N H; Gimenez, S P; Melo, W
Source: Resumo. Conference titles: International Conference on Ion Beam Analysis. Unidade: IF
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CIRNE, Karin Huscher et al. Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. 2011, Anais.. Itapema: IBA, 2011. Disponível em: http://www.if.ufrgs.br/iba2011/program/239.pdf. Acesso em: 22 maio 2024.
APA
Cirne, K. H., Lima, J. A. de, Seixas Jr, L. E., Silveira, M. A. G., Barbosa, M. D. L., Tabacniks, M. H., et al. (2011). Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. In Resumo. Itapema: IBA. Recuperado de http://www.if.ufrgs.br/iba2011/program/239.pdf
NLM
Cirne KH, Lima JA de, Seixas Jr LE, Silveira MAG, Barbosa MDL, Tabacniks MH, Added N, Medina NH, Gimenez SP, Melo W. Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. [Internet]. Resumo. 2011 ;[citado 2024 maio 22 ] Available from: http://www.if.ufrgs.br/iba2011/program/239.pdf
Vancouver
Cirne KH, Lima JA de, Seixas Jr LE, Silveira MAG, Barbosa MDL, Tabacniks MH, Added N, Medina NH, Gimenez SP, Melo W. Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. [Internet]. Resumo. 2011 ;[citado 2024 maio 22 ] Available from: http://www.if.ufrgs.br/iba2011/program/239.pdf
Trabalho de evento-resumo
Performance of electronic devices submitted to X-rays and high energy proton beams. (2011)
Silveira, Marcilei Aparecida Guazzelli da ; Cirne, Karin Huscher; Seixas Jr, L E; Lima, J A de; Barbosa, M D L; Tabacniks, Manfredo Harri ; Added, N; Medina, N H; Gimenez, S P; Melo, W; Santos, R B B
Source: Resumo. Conference titles: International Conference on Ion Beam Analysis. Unidade: IF
Assunto: RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVEIRA, Marcilei Aparecida Guazzelli da et al. Performance of electronic devices submitted to X-rays and high energy proton beams. 2011, Anais.. Itapema: IBA, 2011. Disponível em: http://www.if.ufrgs.br/iba2011/program/88.pdf. Acesso em: 22 maio 2024.
APA
Silveira, M. A. G. da, Cirne, K. H., Seixas Jr, L. E., Lima, J. A. de, Barbosa, M. D. L., Tabacniks, M. H., et al. (2011). Performance of electronic devices submitted to X-rays and high energy proton beams. In Resumo. Itapema: IBA. Recuperado de http://www.if.ufrgs.br/iba2011/program/88.pdf
NLM
Silveira MAG da, Cirne KH, Seixas Jr LE, Lima JA de, Barbosa MDL, Tabacniks MH, Added N, Medina NH, Gimenez SP, Melo W, Santos RBB. Performance of electronic devices submitted to X-rays and high energy proton beams. [Internet]. Resumo. 2011 ;[citado 2024 maio 22 ] Available from: http://www.if.ufrgs.br/iba2011/program/88.pdf
Vancouver
Silveira MAG da, Cirne KH, Seixas Jr LE, Lima JA de, Barbosa MDL, Tabacniks MH, Added N, Medina NH, Gimenez SP, Melo W, Santos RBB. Performance of electronic devices submitted to X-rays and high energy proton beams. [Internet]. Resumo. 2011 ;[citado 2024 maio 22 ] Available from: http://www.if.ufrgs.br/iba2011/program/88.pdf
Trabalho de evento-resumo
Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. (2011)
Silveira, Marcilei Aparecida Guazzelli da ; Medina, N H; Added, N; Tabacniks, Manfredo Harri ; Santos, R B; Cirne, Karin Huscher; Gimenez, S P; Lima, J A De; Seixas, L E
Source: Resumo. Conference titles: Latin American Symposium on Nuclear Physics and Applications. Unidade: IF
Assunto: RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVEIRA, Marcilei Aparecida Guazzelli da et al. Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. 2011, Anais.. Quito: LASNPA, 2011. Disponível em: http://www.lasnpa-quito2011.org/abstract_export.php?id=49. Acesso em: 22 maio 2024.
APA
Silveira, M. A. G. da, Medina, N. H., Added, N., Tabacniks, M. H., Santos, R. B., Cirne, K. H., et al. (2011). Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. In Resumo. Quito: LASNPA. Recuperado de http://www.lasnpa-quito2011.org/abstract_export.php?id=49
NLM
Silveira MAG da, Medina NH, Added N, Tabacniks MH, Santos RB, Cirne KH, Gimenez SP, Lima JAD, Seixas LE. Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. [Internet]. Resumo. 2011 ;[citado 2024 maio 22 ] Available from: http://www.lasnpa-quito2011.org/abstract_export.php?id=49
Vancouver
Silveira MAG da, Medina NH, Added N, Tabacniks MH, Santos RB, Cirne KH, Gimenez SP, Lima JAD, Seixas LE. Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. [Internet]. Resumo. 2011 ;[citado 2024 maio 22 ] Available from: http://www.lasnpa-quito2011.org/abstract_export.php?id=49

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