Filtros : "Seixas jr, L E" Limpar

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  • Source: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Unidade: IF

    Subjects: RADIAÇÃO IONIZANTE, SEMICONDUTORES

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    • ABNT

      CIRNE, Karin Huscher et al. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, v. 273, p. 80-82, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.nimb.2011.07.044. Acesso em: 24 maio 2024.
    • APA

      Cirne, K. H., Silveira, M. A. G., Santos, R. B. B., Gimenez, S. P., Seixas jr, L. E., Melo, W. R. de, et al. (2012). Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273, 80-82. doi:10.1016/j.nimb.2011.07.044
    • NLM

      Cirne KH, Silveira MAG, Santos RBB, Gimenez SP, Seixas jr LE, Melo WR de, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 80-82.[citado 2024 maio 24 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.044
    • Vancouver

      Cirne KH, Silveira MAG, Santos RBB, Gimenez SP, Seixas jr LE, Melo WR de, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 80-82.[citado 2024 maio 24 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.044

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