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Relatorio tecnico
Band structure model of magnetic coupling in semiconductors (2020)
Dalpian, Gustavo M.; Wei, Su-Huai; Gong, X. G.; Fazzio, Adalberto ; Silva, Antonio Jose Roque da
Unidade: IF
Subjects: SEMICONDUTORES, FERROMAGNETISMO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DALPIAN, Gustavo M. et al. Band structure model of magnetic coupling in semiconductors. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0504084.pdf. Acesso em: 23 maio 2024. , 2020
APA
Dalpian, G. M., Wei, S. -H., Gong, X. G., Fazzio, A., & Silva, A. J. R. da. (2020). Band structure model of magnetic coupling in semiconductors. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0504084.pdf
NLM
Dalpian GM, Wei S-H, Gong XG, Fazzio A, Silva AJR da. Band structure model of magnetic coupling in semiconductors [Internet]. 2020 ;[citado 2024 maio 23 ] Available from: https://arxiv.org/pdf/cond-mat/0504084.pdf
Vancouver
Dalpian GM, Wei S-H, Gong XG, Fazzio A, Silva AJR da. Band structure model of magnetic coupling in semiconductors [Internet]. 2020 ;[citado 2024 maio 23 ] Available from: https://arxiv.org/pdf/cond-mat/0504084.pdf
Artigo de periodico
Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 (2018)
Sabino, Fernando P.; Oliveira, Luiz Nunes de; Wei, Su-Huai; Silva, Juarez Lopes Ferreira da
Source: Journal of Applied Physics. Unidades: IFSC, IQSC
Subjects: ÓPTICA, FÍSICA TEÓRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SABINO, Fernando P. et al. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, v. 123, n. 5, p. 055704-1-055704-9, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5018056. Acesso em: 23 maio 2024.
APA
Sabino, F. P., Oliveira, L. N. de, Wei, S. -H., & Silva, J. L. F. da. (2018). Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, 123( 5), 055704-1-055704-9. doi:10.1063/1.5018056
NLM
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.[citado 2024 maio 23 ] Available from: https://doi.org/10.1063/1.5018056
Vancouver
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.[citado 2024 maio 23 ] Available from: https://doi.org/10.1063/1.5018056
Artigo de periodico
Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems (2017)
Sabino, Fernando P.; Oliveira, Luiz Nunes de; Wei, Su-Huai; Silva, Juarez Lopes Ferreira da
Source: Journal of Physics: Condensed Matter. Unidades: IFSC, IQSC
Subjects: ÓPTICA, FÍSICA TEÓRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SABINO, Fernando P. et al. Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems. Journal of Physics: Condensed Matter, v. 29, n. 8, p. 085501-1-085501-7, 2017Tradução . . Disponível em: https://doi.org/10.1088/1361-648X/aa4e8c. Acesso em: 23 maio 2024.
APA
Sabino, F. P., Oliveira, L. N. de, Wei, S. -H., & Silva, J. L. F. da. (2017). Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems. Journal of Physics: Condensed Matter, 29( 8), 085501-1-085501-7. doi:10.1088/1361-648X/aa4e8c
NLM
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems [Internet]. Journal of Physics: Condensed Matter. 2017 ; 29( 8): 085501-1-085501-7.[citado 2024 maio 23 ] Available from: https://doi.org/10.1088/1361-648X/aa4e8c
Vancouver
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems [Internet]. Journal of Physics: Condensed Matter. 2017 ; 29( 8): 085501-1-085501-7.[citado 2024 maio 23 ] Available from: https://doi.org/10.1088/1361-648X/aa4e8c
Trabalho de evento-resumo
Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al, Ga, In) (2016)
Sabino, Fernando Pereira; Besse, Rafael; Oliveira, Luiz Nunes de; Wei, Su-Huai; Silva, Juarez Lopes Ferreira da
Source: Program Book. Conference titles: Brazilian MRS Meeting. Unidades: IFSC, IQSC
Subjects: FÍSICA TEÓRICA, ÓPTICA
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ABNT
SABINO, Fernando Pereira et al. Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al, Ga, In). 2016, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2016. Disponível em: http://www.eventweb.com.br/xvsbpmat/specific-files/grabFile.php?codigo=B2YG. Acesso em: 23 maio 2024.
APA
Sabino, F. P., Besse, R., Oliveira, L. N. de, Wei, S. -H., & Silva, J. L. F. da. (2016). Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al, Ga, In). In Program Book. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de http://www.eventweb.com.br/xvsbpmat/specific-files/grabFile.php?codigo=B2YG
NLM
Sabino FP, Besse R, Oliveira LN de, Wei S-H, Silva JLF da. Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al, Ga, In) [Internet]. Program Book. 2016 ;[citado 2024 maio 23 ] Available from: http://www.eventweb.com.br/xvsbpmat/specific-files/grabFile.php?codigo=B2YG
Vancouver
Sabino FP, Besse R, Oliveira LN de, Wei S-H, Silva JLF da. Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al, Ga, In) [Internet]. Program Book. 2016 ;[citado 2024 maio 23 ] Available from: http://www.eventweb.com.br/xvsbpmat/specific-files/grabFile.php?codigo=B2YG
Artigo de periodico
Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al,Ga,In) (2015)
Sabino, Fernando P.; Besse, Rafael; Oliveira, Luiz Nunes de; Wei, Su-Huai; Silva, Juarez Lopes Ferreira da
Source: Physical Review B. Unidades: IFSC, IQSC
Assunto: FÍSICA TEÓRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SABINO, Fernando P. et al. Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al,Ga,In). Physical Review B, v. No 2015, n. 20, p. 205308-1-205308-7 + supplementary material: 1-3, 2015Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.92.205308. Acesso em: 23 maio 2024.
APA
Sabino, F. P., Besse, R., Oliveira, L. N. de, Wei, S. -H., & Silva, J. L. F. da. (2015). Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al,Ga,In). Physical Review B, No 2015( 20), 205308-1-205308-7 + supplementary material: 1-3. doi:10.1103/PhysRevB.92.205308
NLM
Sabino FP, Besse R, Oliveira LN de, Wei S-H, Silva JLF da. Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al,Ga,In) [Internet]. Physical Review B. 2015 ; No 2015( 20): 205308-1-205308-7 + supplementary material: 1-3.[citado 2024 maio 23 ] Available from: https://doi.org/10.1103/PhysRevB.92.205308
Vancouver
Sabino FP, Besse R, Oliveira LN de, Wei S-H, Silva JLF da. Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al,Ga,In) [Internet]. Physical Review B. 2015 ; No 2015( 20): 205308-1-205308-7 + supplementary material: 1-3.[citado 2024 maio 23 ] Available from: https://doi.org/10.1103/PhysRevB.92.205308
Artigo de periodico
Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case of CdTe (2014)
Ma, Jie; Yang, Jihui; Wei, Su-Huai; Silva, Juarez Lopes Ferreira da
Source: Physical Review B. Unidade: IQSC
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MA, Jie et al. Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case of CdTe. Physical Review B, v. 90, n. 15, p. 155208-1-7, 2014Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.90.155208. Acesso em: 23 maio 2024.
APA
Ma, J., Yang, J., Wei, S. -H., & Silva, J. L. F. da. (2014). Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case of CdTe. Physical Review B, 90( 15), 155208-1-7. doi:10.1103/PhysRevB.90.155208
NLM
Ma J, Yang J, Wei S-H, Silva JLF da. Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case of CdTe [Internet]. Physical Review B. 2014 ; 90( 15): 155208-1-7.[citado 2024 maio 23 ] Available from: https://doi.org/10.1103/PhysRevB.90.155208
Vancouver
Ma J, Yang J, Wei S-H, Silva JLF da. Correlation between the electronic structures and diffusion paths of interstitial defects in semiconductors: The case of CdTe [Internet]. Physical Review B. 2014 ; 90( 15): 155208-1-7.[citado 2024 maio 23 ] Available from: https://doi.org/10.1103/PhysRevB.90.155208
Artigo de periodico
Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study (2009)
Arantes, José Tadeu; Lima, M P; Fazzio, Adalberto; Xiang, H; Wei, Su-Huai; Dalpian, G. M.
Source: Journal of Physical Chemistry B. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FILMES FINOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ARANTES, José Tadeu et al. Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study. Journal of Physical Chemistry B, v. 113, n. 16, p. 5376-5380, 2009Tradução . . Disponível em: http://pubs.acs.org/doi/pdfplus/10.1021/jp8101018. Acesso em: 23 maio 2024.
APA
Arantes, J. T., Lima, M. P., Fazzio, A., Xiang, H., Wei, S. -H., & Dalpian, G. M. (2009). Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study. Journal of Physical Chemistry B, 113( 16), 5376-5380. Recuperado de http://pubs.acs.org/doi/pdfplus/10.1021/jp8101018
NLM
Arantes JT, Lima MP, Fazzio A, Xiang H, Wei S-H, Dalpian GM. Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study [Internet]. Journal of Physical Chemistry B. 2009 ; 113( 16): 5376-5380.[citado 2024 maio 23 ] Available from: http://pubs.acs.org/doi/pdfplus/10.1021/jp8101018
Vancouver
Arantes JT, Lima MP, Fazzio A, Xiang H, Wei S-H, Dalpian GM. Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study [Internet]. Journal of Physical Chemistry B. 2009 ; 113( 16): 5376-5380.[citado 2024 maio 23 ] Available from: http://pubs.acs.org/doi/pdfplus/10.1021/jp8101018
Artigo de periodico
Phenomenological band structure model of magnetic coupling in semiconductors (2006)
Dalpian, Gustavo M; Wei, Su-Huai; Gong, X Z; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Solid State Communications. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES, FERROMAGNETISMO, MAGNETISMO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DALPIAN, Gustavo M et al. Phenomenological band structure model of magnetic coupling in semiconductors. Solid State Communications, v. 138, n. 7, p. 353-358, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2006.03.002. Acesso em: 23 maio 2024.
APA
Dalpian, G. M., Wei, S. -H., Gong, X. Z., Silva, A. J. R. da, & Fazzio, A. (2006). Phenomenological band structure model of magnetic coupling in semiconductors. Solid State Communications, 138( 7), 353-358. doi:10.1016/j.ssc.2006.03.002
NLM
Dalpian GM, Wei S-H, Gong XZ, Silva AJR da, Fazzio A. Phenomenological band structure model of magnetic coupling in semiconductors [Internet]. Solid State Communications. 2006 ; 138( 7): 353-358.[citado 2024 maio 23 ] Available from: https://doi.org/10.1016/j.ssc.2006.03.002
Vancouver
Dalpian GM, Wei S-H, Gong XZ, Silva AJR da, Fazzio A. Phenomenological band structure model of magnetic coupling in semiconductors [Internet]. Solid State Communications. 2006 ; 138( 7): 353-358.[citado 2024 maio 23 ] Available from: https://doi.org/10.1016/j.ssc.2006.03.002

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