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Trabalho de evento
Relação entre oxidação do cavaco e temperatura de corte no fresamento de aços para moldes e matrizes (2019)
Secco, Daniel de Carvalho; Rodrigues, Alessandro Roger ; Jasinevicius, Renato Goulart; Pizani, Paulo Sérgio
Source: Anais. Conference titles: Congresso Brasileiro de Engenharia de Fabricação - COBEF. Unidade: EESC
Subjects: FRESAGEM, OXIDAÇÃO, CAVACOS
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ABNT
SECCO, Daniel de Carvalho et al. Relação entre oxidação do cavaco e temperatura de corte no fresamento de aços para moldes e matrizes. 2019, Anais.. Rio de Janeiro: ABCM, 2019. Disponível em: https://repositorio.usp.br/directbitstream/16646b98-dc93-4e53-b09c-c949452a1f21/prod_022564_sysno_3001367.pdf. Acesso em: 02 jun. 2024.
APA
Secco, D. de C., Rodrigues, A. R., Jasinevicius, R. G., & Pizani, P. S. (2019). Relação entre oxidação do cavaco e temperatura de corte no fresamento de aços para moldes e matrizes. In Anais. Rio de Janeiro: ABCM. Recuperado de https://repositorio.usp.br/directbitstream/16646b98-dc93-4e53-b09c-c949452a1f21/prod_022564_sysno_3001367.pdf
NLM
Secco D de C, Rodrigues AR, Jasinevicius RG, Pizani PS. Relação entre oxidação do cavaco e temperatura de corte no fresamento de aços para moldes e matrizes [Internet]. Anais. 2019 ;[citado 2024 jun. 02 ] Available from: https://repositorio.usp.br/directbitstream/16646b98-dc93-4e53-b09c-c949452a1f21/prod_022564_sysno_3001367.pdf
Vancouver
Secco D de C, Rodrigues AR, Jasinevicius RG, Pizani PS. Relação entre oxidação do cavaco e temperatura de corte no fresamento de aços para moldes e matrizes [Internet]. Anais. 2019 ;[citado 2024 jun. 02 ] Available from: https://repositorio.usp.br/directbitstream/16646b98-dc93-4e53-b09c-c949452a1f21/prod_022564_sysno_3001367.pdf
Trabalho de evento-resumo
Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties (2018)
Piton, Marcelo Rizzo; Koivusalo, Eero; Suomalainen, Soile; Souto, Sérgio Paulo Amaral; Galeti, Helder Vinícius Avanço; Lupo, Donald; Rodrigues, Ariano de Giovanni; Pizani, Paulo Sérgio; Gobato, Yara Galvao; Guina, Mircea
Source: Proceedings. Conference titles: Brazilian MRS Meeting. Unidade: FZEA
Assunto: EPITAXIA POR FEIXE MOLECULAR
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PITON, Marcelo Rizzo et al. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. 2018, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2018. Disponível em: https://new.eventweb.com.br/specific-files/manuscripts/xviisbpmat/1036_1524863860.pdf. Acesso em: 02 jun. 2024.
APA
Piton, M. R., Koivusalo, E., Suomalainen, S., Souto, S. P. A., Galeti, H. V. A., Lupo, D., et al. (2018). Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. In Proceedings. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de https://new.eventweb.com.br/specific-files/manuscripts/xviisbpmat/1036_1524863860.pdf
NLM
Piton MR, Koivusalo E, Suomalainen S, Souto SPA, Galeti HVA, Lupo D, Rodrigues A de G, Pizani PS, Gobato YG, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings. 2018 ;[citado 2024 jun. 02 ] Available from: https://new.eventweb.com.br/specific-files/manuscripts/xviisbpmat/1036_1524863860.pdf
Vancouver
Piton MR, Koivusalo E, Suomalainen S, Souto SPA, Galeti HVA, Lupo D, Rodrigues A de G, Pizani PS, Gobato YG, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings. 2018 ;[citado 2024 jun. 02 ] Available from: https://new.eventweb.com.br/specific-files/manuscripts/xviisbpmat/1036_1524863860.pdf
Trabalho de evento-resumo
Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties (2018)
Gobato, Yara Galvao; Galeti, Helder Vinícius Avanço; Piton, Marcelo Rizzo; Koivusalo, Eero; Suomalainen, Soile; Hakkarainen, Teemu; Souto, Sérgio Paulo Amaral; Rodrigues, Ariano de Giovanni; Pizani, Paulo Sérgio; Lupo, Donald; Guina, Mircea
Source: Proceedings ICPS. Conference titles: International Conference on the Physics of Semiconductors. Unidade: FZEA
Subjects: EPITAXIA POR FEIXE MOLECULAR, SEMICONDUTORES
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ABNT
GOBATO, Yara Galvao et al. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. 2018, Anais.. Montpellier: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo, 2018. Disponível em: http://www.icps2018.org/en/program/abstract. Acesso em: 02 jun. 2024.
APA
Gobato, Y. G., Galeti, H. V. A., Piton, M. R., Koivusalo, E., Suomalainen, S., Hakkarainen, T., et al. (2018). Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. In Proceedings ICPS. Montpellier: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo. Recuperado de http://www.icps2018.org/en/program/abstract
NLM
Gobato YG, Galeti HVA, Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Rodrigues A de G, Pizani PS, Lupo D, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings ICPS. 2018 ;[citado 2024 jun. 02 ] Available from: http://www.icps2018.org/en/program/abstract
Vancouver
Gobato YG, Galeti HVA, Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Rodrigues A de G, Pizani PS, Lupo D, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings ICPS. 2018 ;[citado 2024 jun. 02 ] Available from: http://www.icps2018.org/en/program/abstract
Artigo de periodico
Ultraprecision machining of diffraction optical elements on soft semiconductor crystal (2015)
Jasinevicius, Renato Goulart; Pizani, Paulo Sérgio; Cirino, Giuseppe Antonio
Source: International Journal of Advanced Manufacturing Technology. Unidade: EESC
Subjects: USINAGEM, MUDANÇA DE FASE, DIAMANTE (FERRAMENTAS)
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ABNT
JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio e CIRINO, Giuseppe Antonio. Ultraprecision machining of diffraction optical elements on soft semiconductor crystal. International Journal of Advanced Manufacturing Technology, v. 77, n. 5, p. 1145-1154, 2015Tradução . . Disponível em: https://doi.org/10.1007/s00170-014-6449-4. Acesso em: 02 jun. 2024.
APA
Jasinevicius, R. G., Pizani, P. S., & Cirino, G. A. (2015). Ultraprecision machining of diffraction optical elements on soft semiconductor crystal. International Journal of Advanced Manufacturing Technology, 77( 5), 1145-1154. doi:10.1007/s00170-014-6449-4
NLM
Jasinevicius RG, Pizani PS, Cirino GA. Ultraprecision machining of diffraction optical elements on soft semiconductor crystal [Internet]. International Journal of Advanced Manufacturing Technology. 2015 ; 77( 5): 1145-1154.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1007/s00170-014-6449-4
Vancouver
Jasinevicius RG, Pizani PS, Cirino GA. Ultraprecision machining of diffraction optical elements on soft semiconductor crystal [Internet]. International Journal of Advanced Manufacturing Technology. 2015 ; 77( 5): 1145-1154.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1007/s00170-014-6449-4
Trabalho de evento-anais periodico
The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation (2014)
Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart
Source: Journal of Physics: Conference Series. Conference titles: Biennial International Conference of the APS Topical Group on Shock Compression of Condensed Matter - APS-SCCM. Unidade: EESC
Subjects: ESPECTROSCOPIA RAMAN, SEMICONDUTORES
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ABNT
PIZANI, Paulo Sérgio e JASINEVICIUS, Renato Goulart. The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation. Journal of Physics: Conference Series. Bristol: Escola de Engenharia de São Carlos, Universidade de São Paulo. Disponível em: https://doi.org/10.1088/1742-6596/500/18/182032. Acesso em: 02 jun. 2024. , 2014
APA
Pizani, P. S., & Jasinevicius, R. G. (2014). The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation. Journal of Physics: Conference Series. Bristol: Escola de Engenharia de São Carlos, Universidade de São Paulo. doi:10.1088/1742-6596/500/18/182032
NLM
Pizani PS, Jasinevicius RG. The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation [Internet]. Journal of Physics: Conference Series. 2014 ; 500 1-5.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1088/1742-6596/500/18/182032
Vancouver
Pizani PS, Jasinevicius RG. The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation [Internet]. Journal of Physics: Conference Series. 2014 ; 500 1-5.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1088/1742-6596/500/18/182032
Artigo de periodico
Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer (2013)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Materials Letters. Unidade: EESC
Subjects: MUDANÇA DE FASE, SILÍCIO, USINAGEM
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ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer. Materials Letters, v. 94, n. 1, p. 201-205, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.matlet.2012.12.060. Acesso em: 02 jun. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2013). Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer. Materials Letters, 94( 1), 201-205. doi:10.1016/j.matlet.2012.12.060
NLM
Jasinevicius RG, Duduch JG, Pizani PS. Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer [Internet]. Materials Letters. 2013 ; 94( 1): 201-205.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1016/j.matlet.2012.12.060
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer [Internet]. Materials Letters. 2013 ; 94( 1): 201-205.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1016/j.matlet.2012.12.060
Artigo de periodico
Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon (2012)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Montanari, Luciana; Pizani, Paulo Sérgio
Source: Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. Unidade: EESC
Subjects: TORNEAMENTO, DIAMANTE, MUDANÇA DE FASE, CRISTALOGRAFIA
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ABNT
JASINEVICIUS, Renato Goulart et al. Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, v. 226, n. 3, p. 445-458, 2012Tradução . . Disponível em: https://doi.org/10.1177/0954405411421108. Acesso em: 02 jun. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Montanari, L., & Pizani, P. S. (2012). Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, 226( 3), 445-458. doi:10.1177/0954405411421108
NLM
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2012 ; 226( 3): 445-458.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1177/0954405411421108
Vancouver
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2012 ; 226( 3): 445-458.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1177/0954405411421108
Artigo de periodico
Very intense distinct blue and red photoluminescence emission in 'MG''TI''O IND. 3' thin films prepared by the polymeric precursor method: an experimental and theoretical approach (2012)
Ferri, Elídia Aparecida Vetter; Mazzo, Tatiana Martelli; Longo, Valeria Moraes; Moraes, Eduardo; Pizani, Paulo Sérgio; Siu Li, Máximo; Espinosa, José Waldo Martínez; Varela, José Arana; Longo, Elson
Source: Journal of Physical Chemistry C. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, EMISSÃO DA LUZ, FOTÔNICA, POLÍMEROS (MATERIAIS)
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FERRI, Elídia Aparecida Vetter et al. Very intense distinct blue and red photoluminescence emission in 'MG''TI''O IND. 3' thin films prepared by the polymeric precursor method: an experimental and theoretical approach. Journal of Physical Chemistry C, v. 116, n. 29, p. 15557-15567, 2012Tradução . . Disponível em: https://doi.org/10.1021/jp3021535. Acesso em: 02 jun. 2024.
APA
Ferri, E. A. V., Mazzo, T. M., Longo, V. M., Moraes, E., Pizani, P. S., Siu Li, M., et al. (2012). Very intense distinct blue and red photoluminescence emission in 'MG''TI''O IND. 3' thin films prepared by the polymeric precursor method: an experimental and theoretical approach. Journal of Physical Chemistry C, 116( 29), 15557-15567. doi:10.1021/jp3021535
NLM
Ferri EAV, Mazzo TM, Longo VM, Moraes E, Pizani PS, Siu Li M, Espinosa JWM, Varela JA, Longo E. Very intense distinct blue and red photoluminescence emission in 'MG''TI''O IND. 3' thin films prepared by the polymeric precursor method: an experimental and theoretical approach [Internet]. Journal of Physical Chemistry C. 2012 ; 116( 29): 15557-15567.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1021/jp3021535
Vancouver
Ferri EAV, Mazzo TM, Longo VM, Moraes E, Pizani PS, Siu Li M, Espinosa JWM, Varela JA, Longo E. Very intense distinct blue and red photoluminescence emission in 'MG''TI''O IND. 3' thin films prepared by the polymeric precursor method: an experimental and theoretical approach [Internet]. Journal of Physical Chemistry C. 2012 ; 116( 29): 15557-15567.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1021/jp3021535
Trabalho de evento
Diamond turning of novel materials (2011)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Porto, Arthur José Vieira; Pizani, Paulo Sérgio
Source: Conference Proceedings. Conference titles: euspen International Conference. Unidade: EESC
Subjects: DIAMANTE, NANOTECNOLOGIA
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ABNT
JASINEVICIUS, Renato Goulart et al. Diamond turning of novel materials. 2011, Anais.. Deft: euspen, 2011. Disponível em: http://www.euspen.eu/default.asp?langid=1&contentid=1451. Acesso em: 02 jun. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Porto, A. J. V., & Pizani, P. S. (2011). Diamond turning of novel materials. In Conference Proceedings. Deft: euspen. Recuperado de http://www.euspen.eu/default.asp?langid=1&contentid=1451
NLM
Jasinevicius RG, Duduch JG, Porto AJV, Pizani PS. Diamond turning of novel materials [Internet]. Conference Proceedings. 2011 ;[citado 2024 jun. 02 ] Available from: http://www.euspen.eu/default.asp?langid=1&contentid=1451
Vancouver
Jasinevicius RG, Duduch JG, Porto AJV, Pizani PS. Diamond turning of novel materials [Internet]. Conference Proceedings. 2011 ;[citado 2024 jun. 02 ] Available from: http://www.euspen.eu/default.asp?langid=1&contentid=1451
Trabalho de evento
On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning (2011)
Jasinevicius, Renato Goulart; Porto, Arthur José Vieira; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Conference Proceedings. Conference titles: euspen International Conference. Unidade: EESC
Subjects: DIAMANTE, SEMICONDUTORES
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ABNT
JASINEVICIUS, Renato Goulart et al. On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning. 2011, Anais.. Deft: euspen, 2011. Disponível em: http://www.euspen.eu/default.asp?langid=1&contentid=1451. Acesso em: 02 jun. 2024.
APA
Jasinevicius, R. G., Porto, A. J. V., Duduch, J. G., & Pizani, P. S. (2011). On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning. In Conference Proceedings. Deft: euspen. Recuperado de http://www.euspen.eu/default.asp?langid=1&contentid=1451
NLM
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS. On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning [Internet]. Conference Proceedings. 2011 ;[citado 2024 jun. 02 ] Available from: http://www.euspen.eu/default.asp?langid=1&contentid=1451
Vancouver
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS. On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning [Internet]. Conference Proceedings. 2011 ;[citado 2024 jun. 02 ] Available from: http://www.euspen.eu/default.asp?langid=1&contentid=1451
Trabalho de evento
The crystallographic direction influence on the brittle to ductile transition in diamond turning of silicon crystal (2009)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Proceedings. Conference titles: ASPE Annual Meeting. Unidade: EESC
Subjects: TENSÃO RESIDUAL, DIAMANTE, DUCTILIDADE, SILÍCIO
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ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. The crystallographic direction influence on the brittle to ductile transition in diamond turning of silicon crystal. 2009, Anais.. Monterey: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2009. . Acesso em: 02 jun. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2009). The crystallographic direction influence on the brittle to ductile transition in diamond turning of silicon crystal. In Proceedings. Monterey: Escola de Engenharia de São Carlos, Universidade de São Paulo.
NLM
Jasinevicius RG, Duduch JG, Pizani PS. The crystallographic direction influence on the brittle to ductile transition in diamond turning of silicon crystal. Proceedings. 2009 ;[citado 2024 jun. 02 ]
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. The crystallographic direction influence on the brittle to ductile transition in diamond turning of silicon crystal. Proceedings. 2009 ;[citado 2024 jun. 02 ]
Trabalho de evento
The influence of crystallographic orientation upon material removal modes in single point diamond turning of silicon (2009)
Jasinevicius, Renato Goulart; Pizani, Paulo Sérgio
Source: Proceedings of the euspen. Conference titles: International Conference of the European Society for Precision Engineering & Nanotechnology. Unidade: EESC
Subjects: DIAMANTE, DUCTILIDADE, NANOTECNOLOGIA
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ABNT
JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio. The influence of crystallographic orientation upon material removal modes in single point diamond turning of silicon. 2009, Anais.. San Sebastian: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2009. . Acesso em: 02 jun. 2024.
APA
Jasinevicius, R. G., & Pizani, P. S. (2009). The influence of crystallographic orientation upon material removal modes in single point diamond turning of silicon. In Proceedings of the euspen. San Sebastian: Escola de Engenharia de São Carlos, Universidade de São Paulo.
NLM
Jasinevicius RG, Pizani PS. The influence of crystallographic orientation upon material removal modes in single point diamond turning of silicon. Proceedings of the euspen. 2009 ;[citado 2024 jun. 02 ]
Vancouver
Jasinevicius RG, Pizani PS. The influence of crystallographic orientation upon material removal modes in single point diamond turning of silicon. Proceedings of the euspen. 2009 ;[citado 2024 jun. 02 ]
Artigo de periodico
The influence of crystallographic orientation on the generation of multiple structural phases generation in silicon by cyclic microindentation (2008)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Materials Letters. Unidade: EESC
Assunto: ESTRUTURA DOS SÓLIDOS
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ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. The influence of crystallographic orientation on the generation of multiple structural phases generation in silicon by cyclic microindentation. Materials Letters, v. 62, n. 6-7, p. 812-815, 2008Tradução . . Disponível em: https://doi.org/10.1016/j.matlet.2007.06.071. Acesso em: 02 jun. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2008). The influence of crystallographic orientation on the generation of multiple structural phases generation in silicon by cyclic microindentation. Materials Letters, 62( 6-7), 812-815. doi:10.1016/j.matlet.2007.06.071
NLM
Jasinevicius RG, Duduch JG, Pizani PS. The influence of crystallographic orientation on the generation of multiple structural phases generation in silicon by cyclic microindentation [Internet]. Materials Letters. 2008 ; 62( 6-7): 812-815.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1016/j.matlet.2007.06.071
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. The influence of crystallographic orientation on the generation of multiple structural phases generation in silicon by cyclic microindentation [Internet]. Materials Letters. 2008 ; 62( 6-7): 812-815.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1016/j.matlet.2007.06.071
Artigo de periodico
Pressure-induced electrical and structural anomalies in `Pb IND.1-X´`Ca IND.X´`TiO IND.3´ thin films grown at various oxygen pressures by chemical solution route (2008)
Pontes, F M; Galhiane, Mário Sérgio; Santos, L S; Rissato, Sandra Regina; Pontes, D S L; Longo, E; Leite, E R; Chiquito, Adenilson José; Pizani, Paulo Sérgio; Jardim, R. F.; Escote, Marcia Tsuyama
Source: Journal of Physics D-Applied Physics. Unidade: IF
Assunto: FILMES FINOS
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ABNT
PONTES, F M et al. Pressure-induced electrical and structural anomalies in `Pb IND.1-X´`Ca IND.X´`TiO IND.3´ thin films grown at various oxygen pressures by chemical solution route. Journal of Physics D-Applied Physics, v. 41, n. 11, p. 115402/1-115402/8, 2008Tradução . . Disponível em: http://www.iop.org/EJ/article/0022-3727/41/11/115402/d8_11_115402.pdf?request-id=53233735-2601-4714-a8ca-e34cc624732e. Acesso em: 02 jun. 2024.
APA
Pontes, F. M., Galhiane, M. S., Santos, L. S., Rissato, S. R., Pontes, D. S. L., Longo, E., et al. (2008). Pressure-induced electrical and structural anomalies in `Pb IND.1-X´`Ca IND.X´`TiO IND.3´ thin films grown at various oxygen pressures by chemical solution route. Journal of Physics D-Applied Physics, 41( 11), 115402/1-115402/8. Recuperado de http://www.iop.org/EJ/article/0022-3727/41/11/115402/d8_11_115402.pdf?request-id=53233735-2601-4714-a8ca-e34cc624732e
NLM
Pontes FM, Galhiane MS, Santos LS, Rissato SR, Pontes DSL, Longo E, Leite ER, Chiquito AJ, Pizani PS, Jardim RF, Escote MT. Pressure-induced electrical and structural anomalies in `Pb IND.1-X´`Ca IND.X´`TiO IND.3´ thin films grown at various oxygen pressures by chemical solution route [Internet]. Journal of Physics D-Applied Physics. 2008 ; 41( 11): 115402/1-115402/8.[citado 2024 jun. 02 ] Available from: http://www.iop.org/EJ/article/0022-3727/41/11/115402/d8_11_115402.pdf?request-id=53233735-2601-4714-a8ca-e34cc624732e
Vancouver
Pontes FM, Galhiane MS, Santos LS, Rissato SR, Pontes DSL, Longo E, Leite ER, Chiquito AJ, Pizani PS, Jardim RF, Escote MT. Pressure-induced electrical and structural anomalies in `Pb IND.1-X´`Ca IND.X´`TiO IND.3´ thin films grown at various oxygen pressures by chemical solution route [Internet]. Journal of Physics D-Applied Physics. 2008 ; 41( 11): 115402/1-115402/8.[citado 2024 jun. 02 ] Available from: http://www.iop.org/EJ/article/0022-3727/41/11/115402/d8_11_115402.pdf?request-id=53233735-2601-4714-a8ca-e34cc624732e
Artigo de periodico
Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon (2008)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Montanari, Luciana; Pizani, Paulo Sérgio
Source: Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. Unidade: EESC
Subjects: MUDANÇA DE FASE, ESPECTROSCOPIA RAMAN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart et al. Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, v. 222, n. 9, p. 1065-1073, 2008Tradução . . Disponível em: https://doi.org/10.1243/09544054JEM1161. Acesso em: 02 jun. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Montanari, L., & Pizani, P. S. (2008). Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, 222( 9), 1065-1073. doi:10.1243/09544054JEM1161
NLM
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2008 ; 222( 9): 1065-1073.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1243/09544054JEM1161
Vancouver
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2008 ; 222( 9): 1065-1073.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1243/09544054JEM1161
Artigo de periodico
Structure evaluation of submicrometre silicon chips removed by diamond turning (2007)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Semiconductor Science and Technology. Unidade: EESC
Subjects: SEMICONDUTORES, MICROSCÓPIO ELETRÔNICO, DIAMANTE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. Structure evaluation of submicrometre silicon chips removed by diamond turning. Semiconductor Science and Technology, v. 22, n. 5, p. 561-573, 2007Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/22/5/019. Acesso em: 02 jun. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2007). Structure evaluation of submicrometre silicon chips removed by diamond turning. Semiconductor Science and Technology, 22( 5), 561-573. doi:10.1088/0268-1242/22/5/019
NLM
Jasinevicius RG, Duduch JG, Pizani PS. Structure evaluation of submicrometre silicon chips removed by diamond turning [Internet]. Semiconductor Science and Technology. 2007 ; 22( 5): 561-573.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1088/0268-1242/22/5/019
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. Structure evaluation of submicrometre silicon chips removed by diamond turning [Internet]. Semiconductor Science and Technology. 2007 ; 22( 5): 561-573.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1088/0268-1242/22/5/019
Artigo de periodico
On the ductile response dependence upon phase transformation in diamond turning of semiconductors (2007)
Jasinevicius, Renato Goulart; Pizani, Paulo Sérgio
Source: Physica Status Solidi B : basic research. Unidade: EESC
Subjects: SEMICONDUTORES, DIAMANTE, DUCTILIDADE, MUDANÇA DE FASE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio. On the ductile response dependence upon phase transformation in diamond turning of semiconductors. Physica Status Solidi B : basic research, v. 244, n. Ja 2007, p. 261-265, 2007Tradução . . Disponível em: https://doi.org/10.1002/pssb.200672554. Acesso em: 02 jun. 2024.
APA
Jasinevicius, R. G., & Pizani, P. S. (2007). On the ductile response dependence upon phase transformation in diamond turning of semiconductors. Physica Status Solidi B : basic research, 244( Ja 2007), 261-265. doi:10.1002/pssb.200672554
NLM
Jasinevicius RG, Pizani PS. On the ductile response dependence upon phase transformation in diamond turning of semiconductors [Internet]. Physica Status Solidi B : basic research. 2007 ; 244( Ja 2007): 261-265.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1002/pssb.200672554
Vancouver
Jasinevicius RG, Pizani PS. On the ductile response dependence upon phase transformation in diamond turning of semiconductors [Internet]. Physica Status Solidi B : basic research. 2007 ; 244( Ja 2007): 261-265.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1002/pssb.200672554
Parte de monografia/livro
Ductile machining and high pressure phase transformations of semiconductor crystals (2007)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Semiconductor machining at the micro-nano scale. Unidade: EESC
Subjects: USINAGEM, FERRAMENTAS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. Ductile machining and high pressure phase transformations of semiconductor crystals. Semiconductor machining at the micro-nano scale. Tradução . Kerala: Transworld Research Network, 2007. . . Acesso em: 02 jun. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2007). Ductile machining and high pressure phase transformations of semiconductor crystals. In Semiconductor machining at the micro-nano scale. Kerala: Transworld Research Network.
NLM
Jasinevicius RG, Duduch JG, Pizani PS. Ductile machining and high pressure phase transformations of semiconductor crystals. In: Semiconductor machining at the micro-nano scale. Kerala: Transworld Research Network; 2007. [citado 2024 jun. 02 ]
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. Ductile machining and high pressure phase transformations of semiconductor crystals. In: Semiconductor machining at the micro-nano scale. Kerala: Transworld Research Network; 2007. [citado 2024 jun. 02 ]
Artigo de periodico
Annealing treatment of amorphous silicon generated by single point diamond turning (2007)
Jasinevicius, Renato Goulart; Pizani, Paulo Sérgio
Source: International Journal of Advanced Manufacturing Technology. Unidade: EESC
Subjects: SILICONE, DIAMANTE, RECOZIMENTO, ESPECTROSCOPIA RAMAN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio. Annealing treatment of amorphous silicon generated by single point diamond turning. International Journal of Advanced Manufacturing Technology, v. 34, n. 7-8, p. 680-688, 2007Tradução . . Disponível em: https://doi.org/10.1007/s00170-006-0650-z. Acesso em: 02 jun. 2024.
APA
Jasinevicius, R. G., & Pizani, P. S. (2007). Annealing treatment of amorphous silicon generated by single point diamond turning. International Journal of Advanced Manufacturing Technology, 34( 7-8), 680-688. doi:10.1007/s00170-006-0650-z
NLM
Jasinevicius RG, Pizani PS. Annealing treatment of amorphous silicon generated by single point diamond turning [Internet]. International Journal of Advanced Manufacturing Technology. 2007 ; 34( 7-8): 680-688.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1007/s00170-006-0650-z
Vancouver
Jasinevicius RG, Pizani PS. Annealing treatment of amorphous silicon generated by single point diamond turning [Internet]. International Journal of Advanced Manufacturing Technology. 2007 ; 34( 7-8): 680-688.[citado 2024 jun. 02 ] Available from: https://doi.org/10.1007/s00170-006-0650-z
Trabalho de evento-resumo
Estrutura local do sistema vítreo Pb-Al metafosfato determinada através de Ressonância Magnética Nuclear e Espectroscopia Raman (2007)
Tsuchida, Jefferson Esquina; Pizani, Paulo Sérgio; Schneider, José Fabian; Oliveira, Samuel Leite de
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada - ENFMC. Unidade: IFSC
Subjects: CHUMBO, ALUMÍNIO, RESSONÂNCIA MAGNÉTICA NUCLEAR, ESPECTROSCOPIA RAMAN, VIDRO, FOSFATOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TSUCHIDA, Jefferson Esquina et al. Estrutura local do sistema vítreo Pb-Al metafosfato determinada através de Ressonância Magnética Nuclear e Espectroscopia Raman. 2007, Anais.. São Paulo: Sociedade Brasileira de Física, 2007. . Acesso em: 02 jun. 2024.
APA
Tsuchida, J. E., Pizani, P. S., Schneider, J. F., & Oliveira, S. L. de. (2007). Estrutura local do sistema vítreo Pb-Al metafosfato determinada através de Ressonância Magnética Nuclear e Espectroscopia Raman. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Tsuchida JE, Pizani PS, Schneider JF, Oliveira SL de. Estrutura local do sistema vítreo Pb-Al metafosfato determinada através de Ressonância Magnética Nuclear e Espectroscopia Raman. Resumos. 2007 ;[citado 2024 jun. 02 ]
Vancouver
Tsuchida JE, Pizani PS, Schneider JF, Oliveira SL de. Estrutura local do sistema vítreo Pb-Al metafosfato determinada através de Ressonância Magnética Nuclear e Espectroscopia Raman. Resumos. 2007 ;[citado 2024 jun. 02 ]

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