Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
ABNT
SOUZA, Marcio Alves Sodré de et al. Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0077ecst. Acesso em: 23 maio 2024.APA
Souza, M. A. S. de, Doria, R. T., Souza, M. de, Martino, J. A., & Pavanello, M. A. (2012). Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0077ecstNLM
Souza MAS de, Doria RT, Souza M de, Martino JA, Pavanello MA. Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 maio 23 ] Available from: https://doi.org/10.1149/04901.0077ecstVancouver
Souza MAS de, Doria RT, Souza M de, Martino JA, Pavanello MA. Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 maio 23 ] Available from: https://doi.org/10.1149/04901.0077ecst